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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor
Product specification Supersedes data of August 1995 File under Discrete Semiconductors, SC14 1997 Dec 04
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. PIN DESCRIPTION BFG540W (see Fig.1) 1 2 3 4 collector base emitter emitter MARKING TYPE NUMBER BFG540W BFG540W/X BFG540W/XR PINNING CODE N9 N7 N8
BFG540W BFG540W/X; BFG540W/XR
page
4
3
1 Top view
2
MSB014
Fig.1 SOT343N.
BFG540W/X (see Fig.1) 1 2 3 4 collector emitter base emitter
2 Top view 1
MSB842
page
3
4
BFG540W/XR (see Fig.2) 1 2 3 4 collector emitter base emitter
Fig.2 SOT343R.
QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM |s21|2 F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain noise figure up to Ts = 85 C IC = 40 mA; VCE = 8 V IC = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 14 s = opt; IC = 10 mA; VCE = 8 V; f = 2 GHz - open emitter RBE = 0 CONDITIONS MIN. TYP. MAX. UNIT - - - - 60 - - - - - - 120 0.5 9 16 10 15 2.1 20 15 120 500 250 - - - - - - pF GHz dB dB dB dB V V mA mW
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C -
1997 Dec 04
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature RBE = 0 open collector CONDITIONS open emitter
BFG540W BFG540W/X; BFG540W/XR
MIN. - - - - - -65 -
MAX. 20 15 2.5 120 500 +150 175 V V V
UNIT
mA mW C C
up to Ts = 85 C; see Fig.3; note 1
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 85 C; note 1 VALUE 180 UNIT K/W
Note to the "Limiting values" and "Thermal characteristics" 1. Ts is the temperature at the soldering point of the collector pin.
handbook, halfpage
600
MBG248
P tot (mW) 400
200
0 0 50 100 150 T s ( C)
o
200
VCE 10 V.
Fig.3 Power derating curve.
1997 Dec 04
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO hFE fT Cc Ce Cre GUM PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain; note 1 CONDITIONS
BFG540W BFG540W/X; BFG540W/XR
MIN. 20 15 2.5 - 60 - - - -
TYP. - - - - 120 9 0.9 2 0.5 16 10 15 1.3 1.9 2.1 21 34 500 -50
MAX. - - - 50 250 - - - - - - - 1.8 2.4 - - - - -
UNIT V V V nA GHz pF pF pF dB dB dB dB dB dB dBm dBm mV dB
open emitter; IC = 10 A ; IE = 0 RBE = 0; IC = 40 A open collector; IE = 100 A; IC = 0 open emitter; VCB = 8 V; IE = 0 IC = 40 mA; VCE = 8 V IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IE = ie = 0; VCB = 8 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 900 MHz; - Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C -
|s21|2 F
insertion power gain noise figure
IC = 40 mA; VCE = 8 V; f = 900 MHz; 14 Tamb = 25 C s = opt; IC = 10 mA; VCE = 8 V; f = 900 MHz s = opt; IC = 40 mA; VCE = 8 V; f = 900 MHz s = opt; IC = 10 mA; VCE = 8 V; f = 2 GHz - - -
PL1 ITO Vo d2 Notes
output power at 1 dB gain compression third order intercept point output voltage second order intermodulation distortion
IC = 40 mA; VCE = 8 V; f = 900 MHz; - RL = 50 ; Tamb = 25 C note 2 note 3 note 4 - - -
s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------------ dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) 2. IC = 40 mA; VCE = 8 V; RL = 50 ; Tamb = 25 C; a) fp = 900 MHz; fq = 902 MHz; measured at f(2p - q) = 898 MHz and f(2q - p) = 904 MHz. 3. dim = -60 dB (DIN45004B); Vp = Vo; Vq = Vo -6 dB; Vr = Vo -6 dB; RL = 75 ; VCE = 8 V; IC = 40 mA; a) fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q - r) = 793.25 MHz. 4. IC = 40 mA; VCE = 8 V; Vo = 275 mV; RL = 75 ; Tamb = 25 C; a) fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
1997 Dec 04
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540W BFG540W/X; BFG540W/XR
handbook, halfpage
250
MRA749
handbook, halfpage
1
MRA750
hFE 200
Cre (pF)
0.8
150
0.6
100
0.4
50
0.2
0 10-2
10-1
1
10
IC (mA)
102
0 0 4 8 VCB (V) 12
VCE = 8 V.
IC = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Feedback capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
12
MLC044
fT (GHz) 8
VCE = 8 V
VCE = 4 V
4
0 10 1
1
10
2 I C (mA) 10
f = 1 GHz; Tamb = 25 C.
Fig.6
Transition frequency as a function of collector current; typical values.
1997 Dec 04
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540W BFG540W/X; BFG540W/XR
handbook, halfpage
30
MLC045
handbook, halfpage
30
MLC046
gain (dB) 20 MSG G max G UM
gain (dB) 20
10
10
G max G UM
0 0 10 20 30 50 40 I C (mA)
0 0 10 20 30 50 40 I C (mA)
f = 900 MHz; VCE = 8 V.
f = 2 GHz; VCE = 8 V.
Fig.7
Gain as a function of collector current; typical values.
Fig.8
Gain as a function of collector current; typical values.
handbook, halfpage
50
MLC047
gain (dB)
handbook, halfpage
50
MLC048
gain (dB)
G UM 40
40
G UM MSG
MSG 30 30
20
20
10
G max
10
G max
0 10 10
2
0 10
3
f (MHz)
10
4
10
10
2
10
3
f (MHz)
10
4
IC = 10 mA; VCE = 8 V.
IC = 40 mA; VCE = 8 V.
Fig.9
Gain as a function of frequency; typical values.
Fig.10 Gain as a function of frequency; typical values.
1997 Dec 04
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540W BFG540W/X; BFG540W/XR
handbook, halfpage
-20 dim
MEA973
handbook, halfpage
(dB) -30
-20 d2
MEA972
(dB) -30
-40
-40
-50
-50
-60
-60
-70 10
20
30
40
50
60 IC (mA)
-70 10
20
30
40
50
60 IC (mA)
Vo = 500 mV; f(p + q - r) = 793.25 MHz; VCE = 8 V; Tamb = 25 C; RL = 75 .
Vo = 275 mV; f(p + q) = 810 MHz; VCE = 8 V; Tamb = 25 C; RL = 75 .
Fig.11 Intermodulation distortion as a function of collector current; typical values.
Fig.12 Second order intermodulation distortion as a function of collector current; typical values.
handbook, halfpage
4
MLC049
handbook, halfpage
5
MRA760
F (dB) 3 f = 2000 MHz 2
Fmin (dB) 4 Gass
f = 900 MHz 1000 MHz 2000 MHz
20 Gass (dB) 15
3 2000 MHz
10
1
1000 MHz 900 MHz 500 MHz
2 1000 MHz 900 MHz 500 MHz Fmin
5
1
0
0 1 10 I C (mA)
102
0 1 10 IC (mA)
-5 102
VCE = 8 V.
VCE = 8 V.
Fig.13 Minimum noise figure as a function of collector current; typical values.
Fig.14 Associated available gain as a function of collector current; typical values.
1997 Dec 04
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540W BFG540W/X; BFG540W/XR
handbook, halfpage
4
MLC050
handbook, halfpage
5
MRA761
F (dB) 3
Fmin
I C = 40 mA 10 mA
IC = 10 mA
40 mA Gass
20 Gass (dB) 15
(dB) 4
3
2
10
2
1
5 40 mA Fmin 0
1
10 mA
0 10 2
10 3
f (MHz)
10 4
0 102
103
f (MHz)
-5 104
VCE = 8 V.
VCE = 8 V.
Fig.15 Minimum noise figure as a function of frequency; typical values.
Fig.16 Associated available gain as a function of frequency; typical values.
1997 Dec 04
8
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540W BFG540W/X; BFG540W/XR
handbook, full pagewidth
90 o 1 135 o 0.5
stability circle 1.0 45 o 0.8 0.6
2
unstable region
0.2
F min = 1.3 dB opt
5
0.4 0.2
180 o
0
0.2
0.5 F = 1.5 dB F = 2 dB
1
2
5
0o
0
0.2
5
F = 3 dB 0.5 135 o 1
MLC051
2
45 o 1.0
f = 900 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 .
90 o
Fig.17 Common emitter noise figure circles; typical values.
handbook, full pagewidth
90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 opt 0.5 1 2 5 0o 0
0.2
5
F min = 2.1 dB
G max = 9.8 dB G = 9 dB G = 8 dB 0.2 F = 1.5 dB F = 3 dB F = 4 dB 0.5 135 o 1
MLC052
5
2
45 o 1.0
f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 .
90 o
Fig.18 Common emitter noise figure circles; typical values.
1997 Dec 04
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540W BFG540W/X; BFG540W/XR
handbook, full pagewidth
90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 3 GHz 0.2 5 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0
0.2
40 MHz
5
0.5 135 o 1
2
45 o
MLC053
1.0
90 o VCE = 8 V; IC = 40 mA; Zo = 50 .
Fig.19 Common emitter input reflection coefficient (s11); typical values.
handbook, full pagewidth
90 o
135 o
45 o
40 MHz
180 o
3 GHz 50 40 30 20 10
0o
135 o
45 o
90 o VCE = 8 V; IC = 40 mA.
MLC054
Fig.20 Common emitter forward transmission coefficient (s21); typical values. 1997 Dec 04 10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540W BFG540W/X; BFG540W/XR
handbook, full pagewidth
90 o 3 GHz 135
o
45 o
180 o 0.25
40 MHz 0.20 0.15 0.10 0.05
0o
135 o
45 o
90 o VCE = 8 V; IC = 40 mA.
MLC055
Fig.21 Common emitter reverse transmission coefficient (s12); typical values.
handbook, full pagewidth
90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 3 GHz 40 MHz 1 2 5 0o 0
0.2
5
0.2
5
0.5 135 o 1
2
45 o
MLC056
1.0
90 o VCE = 8 V; IC = 40 mA; Zo = 50 .
Fig.22 Common emitter output reflection coefficient (s22); typical values. 1997 Dec 04 11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
SPICE parameters for the BFG540W crystal SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
(1)
BFG540W BFG540W/X; BFG540W/XR
PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS
VALUE 1.045 184.3 0.981 41.69 10.00 232.4 2.028 43.99 0.992 2.097 166.2 129.8 1.064 5.000 1.000 5.000 353.5 1.340 0.000 1.110 3.000 1.978 600.0 0.332 7.457 11.40 3.158 156.9 0.000 793.7 185.5 0.084 0.150 1.598 0.000 - - V A
UNIT fA
SEQUENCE No. 36 37 38 Note
(1) (1)
PARAMETER VJS MJS FC
VALUE 750.0 0.000 0.814 - -
UNIT mV
fA - - - V mA aA - A m - eV - pF mV - ps - V mA deg fF mV - - ns F
1. These parameters have not been extracted, the default values are shown.
handbook, halfpage
C cb
L1 B
LB B' E' LE C'
L2 C
C be
Cce
MBC964
L3
E
20 (1) 21 (1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35 (1)
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc) fc = scaling frequency = 1 GHz.
Fig.23 Package equivalent circuit SOT343N; SOT343R.
List of components (see Fig.23). DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 70 50 115 0.34 0.10 0.25 0.40 0.40 VALUE fF fF fF nH nH nH nH nH UNIT
1997 Dec 04
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
PACKAGE OUTLINES Plastic surface mounted package; 4 leads
BFG540W BFG540W/X; BFG540W/XR
SOT343N
D
B
E
A
X
y
HE e
vMA
4
3
Q
A A1 c
1
b1 e1 bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343N
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
1997 Dec 04
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540W BFG540W/X; BFG540W/XR
SOT343R
Plastic surface mounted package; reverse pinning; 4 leads
D
B
E
A
X
y
HE e
vMA
3
4
Q
A A1 c
2
wM B bp e1 b1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
1997 Dec 04
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG540W BFG540W/X; BFG540W/XR
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Dec 04
15
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127127/00/03/pp16
Date of release: 1997 Dec 04
Document order number:
9397 750 03146

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